Ti:Sapphire Crystals

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Grouped product items
SKU Specifications Stock Qty Price Add to cart
9407170
Ti:Sapphire Crystals 6.25x20mm
End surface configuration: Brewster cut
Coatings on S1: Uncoated
Coatings on S2: Uncoated
Dimensions tolerance, mm: (+0/-0.1)
Dimensions, mm: 6.25
End surfaces configuration: Brewster cut
Figure of Merit: <250
Orientation: Optical axis C normal to rod axis
Pump absorption @ 532 nm, %: Yes
Surface quality, S-D: 10-5
Thickness tolerance, mm: ±0.1
Thickness, mm: 20
1
€1,437.00
9508600
Ti:Sapphire Crystals 3x6x3.4xmm
End surface configuration:
Perpendicularity: <10 arcmin
Wedge / Parallelism error: < 30 arcsec
Transmitted wavefront distortion, PV: <λ/4 @ 632.8 nm
Surface quality, S-D: 10-5
S1 Flatness, PV IR S2 Flatness, PV: <λ/10 @ 632.8 nm
Pump absorption @ 532 nm, %: >60
Orientation: Optical axis C normal to rod axis
Figure of Merit: > 75
End surfaces confirguration: Brewster cut
Dimensions, mm: 3 (+0.0/-0.1) x 6 (+0.0/-0.1) x 3.4 (±0.1)
Coatings: Uncoated
Clear Aperture: >90
Protective chamfers: <0.1 mm x 45°
1
€1,345.00
9513981
Ti:Sapphire Crystals Ø6x15mm
End surface configuration: Brewster cut
Wedge / Parallelism error: < 30 arcsec
Transmitted wavefront distortion, PV: <λ/4 @ 632.8 nm
Thickness, mm: 15
Thickness tolerance, mm: ±0.1
Surface quality, S-D: 10-5
S1 Flatness, PV IR S2 Flatness, PV: <λ/10 @ 632.8 nm
Clear aperture: >90
Protective chamfers: <0.1 mm x 45°
Coatings on S1: Uncoated
Orientation: Optical axis C normal to rod axis
Figure of Merit: 150
End surfaces configuration: Brewster cut
Dimensions, mm: Ø6
Dimensions tolerance, mm: +0.0/-0.1
Coatings on S2: Uncoated
Perpendicularity: <10 arcmin
Pump absorption @ 532 nm, %: >90
1
€1,260.00
9514061
Ti:Sapphire Crystals Ø6x20mm
End surface configuration: Brewster cut
Protective chamfers: <0.1 mm x 45°
Pump absorption @ 532 nm, %: >90
Surface quality, S-D: 10-5
Thickness, mm: 20
Transmitted wavefront distortion, PV: <λ/4 @ 632.8 nm
Wedge / Parallelism error: < 30 arcsec
S1 Flatness, PV IR S2 Flatness, PV: <λ/10 @ 632.8 nm
Coatings on S2: Uncoated
Coatings on S1: Uncoated
Dimensions tolerance, mm: +0.0/-0.1
Thickness tolerance, mm: ±0.1
Dimensions, mm: Ø6
Clear aperture: >90
End surfaces configuration: Brewster cut
Figure of Merit: 150
Orientation: Optical axis C normal to rod axis
Perpendicularity: <10 arcmin
1
€1,360.00
9514091
Ti:Sapphire Crystals 6x6x20mm
End surface configuration: Brewster cut
Orientation: Optical axis C normal to rod axis
Protective chamfers: <0.1 mm x 45°
Wedge / Parallelism error: < 30 arcsec
Transmitted wavefront distortion, PV: <λ/4 @ 632.8 nm
Thickness, mm: 20
Thickness tolerance, mm: ±0.1
Surface quality, S-D: 10-5
S1 Flatness, PV IR S2 Flatness, PV: <λ/10 @ 632.8 nm
Pump absorption @ 532 nm, %: >90
Coatings on S1: Uncoated
Perpendicularity: <10 arcmin
Figure of Merit: 150
End surfaces configuration: Brewster cut
Dimensions, mm: 6 x 6
Dimensions tolerance, mm: +0.0/-0.1
Coatings on S2: Uncoated
Clear aperture: >90
2
€1,380.00
9515091
Ti:Sapphire Crystals 6x6x7mm
End surface configuration:
Pump absorption @ 532 nm, %: 88-93%
Circumference finish: fine grounding (Ra=1.5μm ; Rt=15μm)
Thickness, mm: to get 7mm after polishing
Precision of Optical axis orientation: < 1deg
Orientation: C-axis in the incidence plane
Material: Ti:Sapphire (Ti:Al2O3)
Figure of Merit: >150
End face angle: Brewster cut @800nm
Dimensions, mm: 6 x 6 (+0.0/-0.1)
Transmitted wavefront distortion, PV: <λ/4 @ 632.8 nm
5
€1,050.00
9517201
Ti:Sapphire Crystals 6x6x7mm
End surface configuration:
Circumference finish: fine grounding (Ra=1.5μm ; Rt=15μm)
Clear Aperture: >90
Dimensions, mm: 6 x 6 (+0.0/-0.1)
End face angle: Brewster cut @800nm
Figure of Merit: >150
Material: Ti:Sapphire (Ti:Al2O3)
Orientation: C-axis in the incidence plane
Precision of Optical axis orientation: < 1deg
Pump absorption @ 532 nm, %: 88-93%
S1 Flatness, PV IR S2 Flatness, PV: <λ/10 @ 632.8 nm
Surface quality, S-D: 10-5
Thickness, mm: 7 (±0.1)
Transmitted wavefront distortion, PV: <λ/4 @ 632.8 nm
Wedge / Parallelism error: < 30 arcsec
1
€1,050.00
9567696
NEW
Ti:Sapphire Crystals xmm
End surface configuration:
PN: 0455-7730S Rev B
5
€1,000.00
9576037
NEW
Ti:Sapphire Crystals xmm
End surface configuration:
Dimensions (W x H), mm: 5 x 1.5 (+0/-0.1mm)
Doping: 0.25%
End surfaces: flat/flat
Figure of Merit (FOM): >130
S1 Flatness, PV IR S2 Flatness, PV: λ/10 @ 633 nm
Length, mm: 2 (±0.1)
Material: Ti:Sapphire
Orientation: Optical axis C normal to rod axis
Parallelism error: 10 arcsec
Surface finishing: 10-5 S-D
Transmitted wavefront distortion, PV: λ/4 inch
1
€1,000.00
9593539
NEW
Ti:Sapphire Crystals 6x6x15xmm
End surface configuration: Right-angle cut
Protective chamfers: <0.1 mm x 45°
Transmitted wavefront distortion, PV: <λ/4 @ 632.8 nm
Surface quality, S-D: 10-5
Pump absorption @ 532 nm, %: >90
Wedge / Parallelism error: < 30 arcsec
Perpendicularity: <10 arcmin
Orientation: Optical axis C normal to rod axis
End surfaces configuration: Right-angle cut
Dimensions, mm: 6 (+0.0/-0.1) x 6 (+0.0/-0.1) x 15 (±0.1)
Clear Aperture: >90
S1 Flatness, PV IR S2 Flatness, PV: <λ/10 @ 632.8 nm
4
€1,000.00
9669306
NEW
Ti:Sapphire Crystals Ø6x15mm
End surface configuration: Brewster cut
Thickness, mm: 15 (±0.1)
Orientation: Optical axis C normal to rod axis
Pump absorption @ 532 nm, %: >90
Dimensions, mm: Ø6 (+0.0/-0.1)
Figure of Merit: 150
End surfaces configuration: Brewster cut
1
€1,000.00
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Titanium doped Sapphire (Al2O3:Ti3+) is a popular crystal, used for making ultra short pulse solid-state or wavelength tunable lasers. These crystals combine supreme thermal and optical properties with broadest lasing range among other materials. Its indefinite stability and short lifetime, in addition to lasing over entire band of 660 to 1050 nm makes Ti:sapphire lasers suitable for variety of applications spanning from material processing to time resolved and multi-photon spectroscopy. Recent studies have showed that diode pumping using a blue diode (445 nm) can also be used for making Ti:Sapphire oscillators. That is expected to raise the next generation of Ti:Sapphire lasers. 

InStockOptics offers Ti:Sapphire crystals precisely cut from a boule of large monocrystal. The crystal is grown using the Czochralski method, which includes steps of:

  • melting of Al2O3 material with low concentration of Titanium
  • inserting a seed crystal to the melt
  • pulling the crystal out of the melt in highly controlled environment
  • cooling down the boule in a strict thermal regime
  • annealing the boule under strongly reducing atmosphere in order to achieve good balance between Ti3+ and Ti4+ ions. That is how the Figure of Merit (FOM) is achieved 150 or more

Applications:

  • Ultra-short pulse lasers
  • High repetition rate oscillators
  • Chirped-pulse laser amplifiers
  • Multi-pass amplifiers
  • Wavelength tunable CW lasers
  • Pulsed X-ray generation

Features:

  • Large gain-bandwidth
  • Very large emission bandwidth
  • Excellent thermal conductivity
  • Short upper-state lifetime (3.2 μs)
  • High saturation power
  • Relatively high laser cross-sections
  • High damage threshold
  • Strong Kerr effect

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