In stock
S1: AR(R<0.15%)@ 1020-1050 +510-525 nm, AOI=0 deg, IBS
Chips: <0.2 mm
Transmitted wavefront distortion, PV: Thickness, mm: 1.1 +/-0.1 mm
Surface quality, S1/S2: 20-10 S-D
S2: AR(R<0.15%)@ 1020-1050 +510-525 nm, AOI=0 deg, IBS
Retardation: L/2 @ 1027 nm + L @ 514 nm (+/- L/100 @ 40 deg C)
Protective chamfers: 0.1-0.3 mm x 45 deg
Parallelism error: <3 arcsec
Material: Crystalline Quartz
Diameter, mm: 12.7 mm (+0/-0.1 mm) (0.25 mm sagitta bevel mark for c-axis)
Clear aperture: 85% (central area)
Coatings:
Chips: <0.2 mm
Transmitted wavefront distortion, PV:
Surface quality, S1/S2: 20-10 S-D
S2: AR(R<0.15%)@ 1020-1050 +510-525 nm, AOI=0 deg, IBS
Retardation: L/2 @ 1027 nm + L @ 514 nm (+/- L/100 @ 40 deg C)
Protective chamfers: 0.1-0.3 mm x 45 deg
Parallelism error: <3 arcsec
Material: Crystalline Quartz
Diameter, mm: 12.7 mm (+0/-0.1 mm) (0.25 mm sagitta bevel mark for c-axis)
Clear aperture: 85% (central area)
Coatings: