In stock
Chips: <0.2 mm
S1: HRp>99.8% @ 513-534 nm, HTs>97% @ 1025-1070 nm, AOI=43-47 deg (sputtering technology)
S2: AR(Rs<0.6%)@ 1025-1070 nm, AOI=43-47 deg (sputtering technology)
S1 Flatness, PV IR S2 Flatness, PV:
Surface roughness (RMS), S1/S2: <10 angstrom
Transmitted wavefront distortion, PV:
Thickness, mm: 4 mm (+/-0.1 mm)
Coatings:
Parallelism error: <1 arcmin
Clear aperture: >14.4 mm diameter, central area
Chamfer: 0.1-0.25 mm x 45 deg
Diameter, mm: 16 mm (+0/-0.1 mm)
LIDT: 3 mJ/cm^2, 1030 nm, 500 fs
LIDT: 3 mJ/cm^2, 515 nm, 500 fs
Material: UVFS (Corning 7980 0A)
S1: HRp>99.8% @ 513-534 nm, HTs>97% @ 1025-1070 nm, AOI=43-47 deg (sputtering technology)
S2: AR(Rs<0.6%)@ 1025-1070 nm, AOI=43-47 deg (sputtering technology)
S1 Flatness, PV IR S2 Flatness, PV:
Surface roughness (RMS), S1/S2: <10 angstrom
Transmitted wavefront distortion, PV:
Thickness, mm: 4 mm (+/-0.1 mm)
Coatings:
Parallelism error: <1 arcmin
Clear aperture: >14.4 mm diameter, central area
Chamfer: 0.1-0.25 mm x 45 deg
Diameter, mm: 16 mm (+0/-0.1 mm)
LIDT: 3 mJ/cm^2, 1030 nm, 500 fs
LIDT: 3 mJ/cm^2, 515 nm, 500 fs
Material: UVFS (Corning 7980 0A)
