In stock
S1(): HR>99.5%@ 532 nm + HT>90%@ 266 nm, AOI=0°-5°
Protective chamfers: 0.1 – 0.2 mm x 45°
Thickness, mm: 1 mm (+/-0.1 mm)
Surface quality, S1/S2: 60-40 S-D
S1 Flatness, PV IR S2 Flatness, PV: λ/2@ 633 nm
Parallelism error: <1 arcmin
Material: CaF2 (DUV grade)
LIDT: >1 J/cm2 @ 1 ns, 266 nm, >5 J/cm2 @ 1 ns, 532 nm
Diameter, mm: 6 mm (+0/-0.1 mm)
Coatings:
Chips: <0.1 mm
Clear aperture: >85 %
S2(): AR<0.5%@ 266 nm, AOI=0°-5°
Protective chamfers: 0.1 – 0.2 mm x 45°
Thickness, mm: 1 mm (+/-0.1 mm)
Surface quality, S1/S2: 60-40 S-D
S1 Flatness, PV IR S2 Flatness, PV: λ/2@ 633 nm
Parallelism error: <1 arcmin
Material: CaF2 (DUV grade)
LIDT: >1 J/cm2 @ 1 ns, 266 nm, >5 J/cm2 @ 1 ns, 532 nm
Diameter, mm: 6 mm (+0/-0.1 mm)
Coatings:
Chips: <0.1 mm
Clear aperture: >85 %
S2(): AR<0.5%@ 266 nm, AOI=0°-5°
