In stock
S1(IBS): AR(R<0.1 %)@ 1010-1050 nm (centered at 1030 nm) , AOI=0 deg
Transmitted wavefront distortion, PV: <λ/10 @ 632.8 nm
Thickness, mm: 3 mm (+/-0.1 mm)
Surface quality: 20-10 S-D
S2(IBS): AR(R<0.1 %)@ 1010-1050 nm (centered at 1030 nm) , AOI=0 deg
Protective chamfers: 0.1-0.3 mm x 45 deg
Parallelism error: <1 arcmin
Material: FS (Suprasil 300)
Diameter, mm: 25.4 (+0/-0.1 mm)
Coatings:
Chips: <0.2 mm
Clear aperture: >90 %
Transmitted wavefront distortion, PV: <λ/10 @ 632.8 nm
Thickness, mm: 3 mm (+/-0.1 mm)
Surface quality: 20-10 S-D
S2(IBS): AR(R<0.1 %)@ 1010-1050 nm (centered at 1030 nm) , AOI=0 deg
Protective chamfers: 0.1-0.3 mm x 45 deg
Parallelism error: <1 arcmin
Material: FS (Suprasil 300)
Diameter, mm: 25.4 (+0/-0.1 mm)
Coatings:
Chips: <0.2 mm
Clear aperture: >90 %
