In stock
Chips: <0.05 mm
Clear aperture: > 10.0 mm
Coatings: E-Beam
Diameter, mm: 12.7 mm (+0.0/-0.1 mm)
Material: UVFS C7980 0F
Parallelism error: <30 arcsec
Pyramidal error (of the edge): <15 arcmin
Protective chamfers: 0.1-0.2 mm x 45°
S1: AR(R<0.5%)@510 nm – 530 nm + AR(R<0.5%)@1000 nm – 1060 nm, AOI=0°-10°
S2: AR(R<0.5%)@510 nm – 530 nm + AR(R<0.5%)@1000 nm – 1060 nm, AOI=0°-10°
Surface quality: 20/5 S/D (before coating)
Thickness, mm: 2.0 (+/-0.1 mm)
Transmitted wavefront distortion, PV: <λ/10@633 nm
Clear aperture: > 10.0 mm
Coatings: E-Beam
Diameter, mm: 12.7 mm (+0.0/-0.1 mm)
Material: UVFS C7980 0F
Parallelism error: <30 arcsec
Pyramidal error (of the edge): <15 arcmin
Protective chamfers: 0.1-0.2 mm x 45°
S1: AR(R<0.5%)@510 nm – 530 nm + AR(R<0.5%)@1000 nm – 1060 nm, AOI=0°-10°
S2: AR(R<0.5%)@510 nm – 530 nm + AR(R<0.5%)@1000 nm – 1060 nm, AOI=0°-10°
Surface quality: 20/5 S/D (before coating)
Thickness, mm: 2.0 (+/-0.1 mm)
Transmitted wavefront distortion, PV: <λ/10@633 nm
