In stock
LIDT: >1 J/cm² @ 1 ns, 266 nm, >5 J/cm² @ 1 ns, 532 nm
Thickness, mm: 1 (±0.1)
S2: AR<0.5% @ 266 nm, AOI = 0-5°
S1: HR>99.5% @ 532 nm + HT>90% @ 266 nm, AOI = 0-5°
S1/S2 Surface quality, S-D: 20-10
S1/S2 Surface flatness: λ/2@ 633 nm
Material: CaF2 (DUV grade)
Diameter, mm: 6 (+0/-0.1)
Coatings:
Clear Aperture: >85
Chips: <0.1 mm
Protective chamfers: 0.1-0.2 mm x 45°
Parallelism error: <1 arcmin
Thickness, mm: 1 (±0.1)
S2: AR<0.5% @ 266 nm, AOI = 0-5°
S1: HR>99.5% @ 532 nm + HT>90% @ 266 nm, AOI = 0-5°
S1/S2 Surface quality, S-D: 20-10
S1/S2 Surface flatness: λ/2@ 633 nm
Material: CaF2 (DUV grade)
Diameter, mm: 6 (+0/-0.1)
Coatings:
Clear Aperture: >85
Chips: <0.1 mm
Protective chamfers: 0.1-0.2 mm x 45°
Parallelism error: <1 arcmin
